 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AP9926GEM Pb Free Plating Product Advanced Power Electronics Corp. Low on-resistance Capable of 2.5V gate drive Low drive current Surface mount package SO-8 S1 G2 S2 G1 D2 D1 D1 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 30m 6A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 G1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 20 12 6 4.8 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 20112002 AP9926GEM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. 20 0.5 - Typ. 0.1 15.6 12.5 1 6.5 5 9 26.2 6.8 355 190 85 Max. Units 30 45 1 25 10 V V/ m m V S uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=20V, VGS=0V VDS=20V ,VGS=0V VGS= 10V ID=6A VDS=20V VGS=5V VDS=10V ID=1A RG=3.3,VGS=5V RD=10 VGS=0V VDS=20V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V,VS=1.2V Tj=25,IS=1.7A,VGS=0V Min. - Typ. - Max. Units 1.67 1.2 A V Forward On Voltage 2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135/W when mounted on Min. copper pad. AP9926GEM 25 24 T C =25 o C 20 4.5V 4.0V 3.5V 3.0V ID , Drain Current (A) T C =150 o C 18 4.5V 4.0V 3.5V 3.0V ID , Drain Current (A) 15 2.5V 2.5V 12 10 6 5 V GS =2.0V V GS =2.0V 0 0 0.5 1 1.5 2 2.5 0 0 0.5 1 1.5 2 2.5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 45 1.8 I D =6A 40 I D =6A o T C =25 C 1.5 V GS =4.5V RDS(ON) (m) 35 Normalized R DS(ON) 2 3 4 5 6 1.2 30 0.9 25 20 0.6 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP9926GEM 8 2.5 2 6 ID , Drain Current (A) 1.5 4 PD (W) 1 0.5 0 25 50 75 100 125 150 0 30 60 90 120 150 2 0 T c , Case Temperature ( o C) T c , Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 Duty Factor = 0.5 Normalized Thermal Response (R thja) 10 0.2 1ms ID (A) 10ms 1 0.1 0.1 0.05 0.02 100ms 1s 0.1 0.01 PDM 0.01 t T Single Pulse T C =25 o C Single Pulse 0.01 0.1 1 10 10s DC Duty Factor = t/T Peak Tj = P DM x Rthja + Ta Rthja=135 oC/W 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP9926GEM 12 1000 f=1.0MHz I D =6A Ciss VGS , Gate to Source Voltage (V) 9 V DS =10V V DS =15V V DS =20V Coss C (pF) 100 6 Crss 3 0 0 5 10 15 20 25 10 1 8 15 22 29 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 1.5 10 1.2 T j =150 o C T j =25 o C VGS(th) (V) IS(A) 1 0.9 0.1 0.6 0.01 0 0.4 0.8 1.2 1.6 0.3 -50 0 50 100 150 V SD (V) T j , Junction Temperature ( o C ) Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP9926GEM RD VDS 90% VDS RG D G TO THE OSCILLOSCOPE 0.5 x RATED VDS + 5v - S VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE D G RATED VDS QG 5V QGS QGD S + VGS 1~ 3 mA IG ID Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
Price & Availability of AP9926GEM
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |